Specifications | Details |
---|---|
CL(IDD) | 19 cycles |
Row Cycle Time (tRCmin) | 45.75ns (min.) |
Refresh to Active/Refresh | 350ns (min.) |
Command Time (tRFCmin) | |
Row Active Time (tRASmin) | 32ns (min.) |
Maximum Operating Power | TBD W* (*Power will vary depending on the SDRAM used.) |
UL Rating | 94 V – 0 |
Operating Temperature | 0°C to +85°C |
Main Chips | Micron, Samsung, Hynix |
Storage Temperature | -55°C to +100°C |
Description | Details |
---|---|
Description | This document describes Value RAM is a 1G x 64-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8, memory module, based on eight 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 288-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows. |
Features | Details |
---|---|
Power Supply | VDD=1.2V Typical |
VDDQ | 1.2V Typical |
VPP | 2.5V Typical |
VDDSPD | 2.2V to 3.6V |
Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals | |
Low-power auto self refresh (LPASR) | |
Data bus inversion (DBI) for data bus | |
On-die VREFDQ generation and calibration | |
Single-rank | |
On-board I2 serial presence-detect (SPD) EEPROM | |
16 internal banks; 4 groups of 4 banks each | |
Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) | |
Selectable BC4 or BL8 on-the-fly (OTF) | |
Fly-by topology | |
Terminated control command and address bus | |
PCB | Height 1.23” (31.25mm) |
RoHS Compliance | Compliant and Halogen-Free |